Regensburg 2007 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 11: Symposium: New Materials for Nanoelectronics

DS 11.7: Hauptvortrag

Dienstag, 27. März 2007, 12:15–12:45, H32

Electronic Transport in Carbon Nanotube FETs — •Joachim Knoch — IBM Research GmbH, Zurich Research Laboratory, Säumerstrasse 4, 8803 Rüschlikon, Switzerland

Carbon nanotubes have recently attracted a great deal of interest due to their unique structural and electronic properties. In particular, carbon nanotube field-effect transistors have been widely investigated as an alternative for future nanoelectronics applications. In the present talk we will discuss the electronic transport properties of CNFETs.

Usually, contacts are formed by depositing metals on top of the nanotube. One focus of the talk will be the investigation of the role of these source/drain contacts on the device behavior. As it turns out, CNFETs behave similarly to ultrathin-body Schottky barrier MOSFETs. Although the ultrathin diameter (body) allows for an excellent carrier injection through the Schottky-barrier, its presence prohibits the observability of multi-mode transport in such CNFETs. Details regarding multi-mode transport and the role of scattering for the visibility of multi-mode transport will be discussed. Furthermore, we will present CNFETs with doped  source/drain contacts and study the relevant phenomena occuring in such conventional-type devices. A charge pile-up in case of short channel devices deteriorates the device performance and leads to large off-state leakage currents. Finally, a new device architecture based on band-to-band tunneling is introduced which allows to combine an excellent on-state performance with a switching ability superior to any conventional FET. It will be shown that one-dimensional objects are ideally suited for the realization of such tunneling FETs.