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09:30 |
DS 11.1 |
Invited Talk:
Strained silicon for advanced nanotechnology — •Michael Goryll, Dan Buca, Qing-Tai Zhao, Bernd Holländer, Siegfried Mantl, Roger Loo, Duy Nguyen, and Manfred Reiche
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10:00 |
DS 11.2 |
Invited Talk:
Integration of functional epitaxial oxides into silicon: From high-K application to nanostructures — •H. Jörg Osten
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10:30 |
DS 11.3 |
Invited Talk:
Rare Earth based amorphous ternary oxide layers as alternative gate dielectrics — •Jürgen Schubert, Tassilo Heeg, Martin Roeckerath, Joao Marcelo Jordao Lopes, Uffe Littmark, Chao Zhao, Matty Caymax, Valerie Avanasiev, Lisa Edge, Yunfa Jia, Wei Tian, and Darrell Schlom
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11:00 |
DS 11.4 |
Invited Talk:
Advanced SOI CMOS transistors for high performance microprocessors — •Manfred Horstmann
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11:30 |
DS 11.5 |
Herstellung und Charakterisierung von MOSFETs mit Gadoliniumscandat als alternatives Gatedielektrikum — •Martin Roeckerath, Joachim Knoch, Joao Marcelo Jordao Lopes, Tassilo Heeg, Jürgen Schubert und Siegfried Mantl
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11:45 |
DS 11.6 |
Invited Talk:
Graphene: A new Electronic Material — •Max Christian Lemme, Tim Echtermeyer, Matthias Baus, and Heinrich Kurz
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12:15 |
DS 11.7 |
Invited Talk:
Electronic Transport in Carbon Nanotube FETs — •Joachim Knoch
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12:45 |
DS 11.8 |
Strukturierte Schichtsysteme für horizontal gerichtetes Wachstum von Kohlenstoff-Nanoröhren — •Matthias Büenfeld, Bernd Schröter, Frank Schmidl, Matthias Grube, René Geithner, Thomas Pertsch, Detlef Schelle, Wolfgang Richter, Andreas Tünnermann und Paul Seidel
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13:00 |
DS 11.9 |
Determination of the coefficient of thermal expansion (CTE) of porous dielectric films using x-ray reflectometry — •Sebastian Taube, Holm Geisler, Ulrich Mayer, Inka Zienert, Michael Hecker, and Ehrenfried Zschech
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