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DS: Fachverband Dünne Schichten

DS 13: Thin Film Analytics II

DS 13.3: Vortrag

Dienstag, 27. März 2007, 15:45–16:00, H34

High resolution Rutherford backscattering spectrometry for investigating interdiffusion of thin films — •Christian Borschel¹, Martin Schnell¹, Michael Uhrmacher¹, Carsten Ronning¹, Christian Wenger², and Hans Hofsäss¹ — ¹II. Physikalisches Institut, Universität Göttingen, Friedrich-Hund-Platz 1, D-37077 Göttingen — ²IHP microelectronics, Im Technologiepark 25, D-15236 Frankfurt (Oder)

Rutherford backscattering spectrometry (RBS) is a widely used technique to measure concentration-depth profiles of thin films. Usually a semiconductor detector is used to measure the energy of the backscattered ions. The typical energy resolution of 10 to 15 keV of these detectors is the limiting factor for the achievable depth resolution. We use an electrostatical analyzer to measure the energy of the backscattered ions which can improve the energy resolution (and along with that the depth resolution) by a factor of about 10. The enhanced depth resolution makes RBS utilizable to investigate the interdiffusion at the interfaces of thin films. As an example we present experiments on the interdiffusion at the interface of a high-k dielectric Pr₂O₃ film on SiO₂. We show what information about the diffusion of Pr and Si could be extracted from the experimental results and compare the method with other characterization techniques.