Regensburg 2007 – scientific programme

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DS: Fachverband Dünne Schichten

DS 14: Thin Film Analytics III

DS 14.2: Talk

Tuesday, March 27, 2007, 17:00–17:15, H34

Self assemblied Ge nanocrystals on high-k cubic Pr₂O₃(111) /Si(111) support systems — •Alessandro Giussani¹, Thomas Schroeder¹, Cristian Mokuta², Till Metzger², Dorin Geiger³, Peter Formanek³, and Hannes Lichte³ — ¹IHP-Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany — ²European Synchrotron Radiation Facility, BP 220, 38043 Grenoble, France — ³Technical University of Dresden, Institute of Structure Physics, Zellescher Weg 16, 01062 Dresden, Germany

The stoichiometry, structure and defects of self-assemblied heteroepitaxial Ge nanodots on twin-free type B oriented cubic Pr₂O₃(111) layers on Si(111) substrates is studied to shed light on the fundamental physics of nanocrystal based nonvolatile memory effects. XPS studies prove the high stoichiometric purity of the Ge nanodots on the cubic Pr₂O₃(111)/Si(111) support system. Synchrotron based X-ray diffraction, including resonant scattering techniques, were applied to determine the epitaxial relationship, showing that the heteroepitaxial Ge(111) nanodots crystallize in the cubic diamond structure with an exclusive type A stacking configuration with respect to Si(111). GI-SAXS was used in addition to analyse the average shape, size and distance parameters of the single crystalline Ge nanocrystal ensemble. Furthermore, TEM micrographs report that partial dislocations are the prevailing extended defect structure in the Ge nanodots, probably induced by surface roughness on the atomic scale of the cubic Pr₂O₃(111) support.