Regensburg 2007 – scientific programme

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DS: Fachverband Dünne Schichten

DS 15: Poster Session

DS 15.29: Poster

Tuesday, March 27, 2007, 15:00–17:00, Poster B

Characterisation of praseodymium-oxide films on Si(111) including SPALEED, XRD and GIXRD measurements — •Sebastian Gevers¹, Thomas Weisemoeller¹, Thomas Schroeder², Peter Zaumseil², Lars Boewer¹, Carsten Deiter¹, and Joachim Wollschlaeger¹ — ¹Fachbereich Physik, Universität Osnabrück, Barbarastrasse 7, 49076 Osnabrück, Germany — ²IHP Microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

Materials with high dielectric constants k offer great potentialities to improve performance of semiconductor devices. In this context the investigation of praseodymium-oxide films leads to a deeper understanding of fundamental aspects of heteroepitaxial growth of oxide films on Si(111). Object of this research are Si(111) samples on which Pr₂O₃ films of thickness d ≤ 10 nm have been deposited. The oxide films were produced using MBE, so that the Pr₂O₃ films have hexagonal structure. Afterwards they were annealed in N₂ to form Pr₂O₃ films of cubic structure. Several investigation methods like SPALEED and AES as well as (GI)XRD were used. (GI)XRD investigations were performed at beamlines BW2 and W1 at HASYLAB(DESY). Throughout these experiments a complete transformation of the crystallographic phase from hexagonal-Pr₂O₃ to cubic-Pr₂O₃ (B oriented) could be observed. This can be attributed to the annealing process. The thickness of the crystalline part of the oxide film annealed at higher temperatures decreases. Therefore silicate is formed at the interface. SPALEED investigation shows a 4×4 reconstruction at the cubic phase.