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DS: Fachverband Dünne Schichten

DS 15: Poster Session

DS 15.30: Poster

Dienstag, 27. März 2007, 15:00–17:00, Poster B

Infrared in-situ analysis of solid-liquid interfaces — •Karsten Hinrichs¹, Katy Roodenko¹, and Jörg Rappich² — ¹ISAS - Institute for Analytical Sciences, Department Berlin, Albert-Einstein-Str. 9, 12489 Berlin, Germany — ²Hahn-Meitner-Institut Berlin GmbH, Abt. Silizium-Photovoltaik, Kekuléstr. 5, 12489 Berlin, Germany

Polarisation dependent Infrared (IR) spectroscopy and I-V measurements were used for monitoring the etching of silicon oxide and the electrochemical grafting of nitrobenzene on H passivated silicon surfaces. A new type of in-situ cell is presented which allows nanometer thickness sensitivity for investigation of inorganic or organic films at the liquid-solid interface. The spectra taken in the mid infrared spectral range were simulated within an optical model and the etch rate was determined quantitatively.