Regensburg 2007 – scientific programme

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DS: Fachverband Dünne Schichten

DS 15: Poster Session

DS 15.40: Poster

Tuesday, March 27, 2007, 15:00–17:00, Poster B

Influence of different halides and oxygen on BN thin film deposition — •Sarah Panowitz, Jens Matheis, and Achim Lunk — Institut für Plasmaforschung, Universität Stuttgart, Pfaffenwaldring 31, D-70569 Stuttgart

Cubic boron nitride (c-BN) is a material with various fields of applications due to its high hardness, chemical inertness and the possibility for p- and n-doping. c-BN can be produced by high-pressure-high-temperature process, plasma enhanced physical vapor deposition as well as by plasma enhanced chemical vapor deposition. With the last mentioned method c-BN films with low internal stress can be produced. Therefore modeling of the chemical route was performed with "CHEMKIN" to restrict the parameter compositions.

The contribution is divided into two parts. In part I deposition of boron nitride is calculated at conditions in thermodynamic equilibrium. In the equilibrium model we have studied the system B-N-H-X where X represents F, Cl, Br or O. While the flow B, N, H was kept constant according to experimental conditions the flow of the halides and oxygen was varied in a wide range. The formation of BN decreases sensitively going from bromine to fluorine. In the case of oxygen B₂O₃ will be produced additionally in a wide temperature range. Only in a small parameter range the formation of B₂O₃ can be prevented during BN deposition. Part II includes the comparison of the calculated results in the thermodynamical equilibrium with the experiments.