Regensburg 2007 – scientific programme
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DS: Fachverband Dünne Schichten
DS 15: Poster Session
DS 15.50: Poster
Tuesday, March 27, 2007, 15:00–17:00, Poster B
Nanoscaled surface structures on Silicon induced by low energy sputtering under different angles — •Raphael Niepelt, Klaus Jesiek, Kun Zhang, Carsten Ronning, and Hans Hofsaess — II. Physikalisches Institut, Universität Göttingen, Friedrich-Hund-Platz 1, D-37077 Göttingen
The balance between surface roughening by sputtering and smoothing by atomistic diffusion leads to the formation of periodic nanoscaled ripples on surfaces upon ion irradiation. We investigated the surface morphology of Xe-irridiated Si(100) surfaces, using an ion energy of 2-5 keV under angles from 0∘ up to 85∘ and fluences between 2·1016 cm−2 and 1·1018 cm−2. Characteristic patterns were observed with different wavelengths for angles above 60∘. Below this angle no ripples were detected, which is in contrast to existing literature. This discrepancy might be owing to different ion fluxes; therefore we will present first results obtained using a microbeam with varying fluxes over several orders of magnitude.