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DS: Fachverband Dünne Schichten

DS 15: Poster Session

DS 15.52: Poster

Dienstag, 27. März 2007, 15:00–17:00, Poster B

GISAXS and GID studies of ripple and dot pattern on Si and Ge surfaces by low-energy ion beam erosion — •Bashkim Ziberi¹, Frank Frost¹, Geradina Carbone², Till Metzger², and Bernd Rauschenbach¹ — ¹Leibniz-Institut für Oberflächenmodifizierung e. V. , 04318 Leipzig, Germany — ²ID 01, ESRF, Grenoble, France

Low-energy ion beam erosion of solid surfaces is a very effective alternative approach for the generation of self-organized nanostructures. Under certain conditions, sputtering can produce well-ordered patterns, like ripples or dots on Si and Ge surfaces. In this contribution GISAXS (Grazing Incidence Small Angle X-ray Scattering) and GID (Grazing Incidence Diffraction) techniques are used to study the periodicity, ordering and lateral correlation of nanostructures formed by low-energy ion beam erosion on Si and Ge surfaces (E_ion≤ 2000 eV). While GISAXS gives information about structures on the surface, GID enables us to study the crystalline structure of nanostructures. The beam spot (along the sample) for the experiments was few millimeters in size. The measurements indicate the high lateral ordering of nanostructures and the strong correlation between the amorphous part of nanostructures and the crystalline interface. The results show that the ripple are aligned perpendicular to the incoming ion beam and the orientational ordering of ripples increases with increasing ion fluence. Further, the results demonstrate the asymmetric shape of ripples. Additionally, the long range hexagonal ordering of dots covering the whole sample surface as observed with atomic force microscopy is verified.