Regensburg 2007 – scientific programme

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DS: Fachverband Dünne Schichten

DS 15: Poster Session

DS 15.56: Poster

Tuesday, March 27, 2007, 15:00–17:00, Poster B

Controlled ion bombardment during sputter-deposition of thin films — •Evelyn Scheer, Dominik Köhl, Daniel Severin, and Matthias Wuttig — I. Physikalisches Institut, RWTH-Aachen, D-52056 Aachen

We present a setup that enables the in-situ bombardment of growing films with ions from a broad-beam ion source. An additional ion source has been mounted to an existing sputter-chamber such that simultaneous bombardment during deposition is possible at an angle of incidence of 45^∘ with respect to the substrate normal. The ion source can be operated with various gases. This allows a detailed study of the film growth. Thereby the ion energy can be varied between 100 eV up to 2 keV with ion current densities of up to 100 µA/cm².

Various techniques, such as x-ray diffraction, x-ray reflectometry, spectroscopic ellipsometry and electrical measurements, have been employed to investigate the effects of the bombardment. A correlation between film properties and the deposition parameters such as ion flux and ion energy provides the means for tailoring films with desired functionalities.