Regensburg 2007 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 15: Poster Session

DS 15.61: Poster

Dienstag, 27. März 2007, 15:00–17:00, Poster B

The effect of target material and process parameters on the deposition rate of films grown by high power pulse magnetron sputtering — •Julia Dukwen, Kostas Sarakinos, Jones Alami, and Matthias Wuttig — Institute of Physics (IA), RWTH Aachen University of Technology, 52056 Aachen, Germany

High power pulsed magnetron sputtering (HPPMS) is a novel ionized PVD (IPVD) technique, in which a high degree of ionization of the sputtered material is obtained resulting in thin films with superior properties as compared to those achieved by other IPVD techniques, e.g. dc magnetron sputtering (dcMS). Moreover in HPPMS lower deposition rates (R_d) are obtained, in comparison to the dcMS ones, when a constant average target power is used. However, we have recently shown that at a constant average target current the HPPMS rates are equal to the dcMS rates up to a threshold peak target current (I_Tp) value. In this work we study the HPPMS and dcMS rates R_d for a number of materials (Cr, Cu, C) at a constant average target current and different I_Tp and target voltage (V_T) values. Time-resolved optical emission spectroscopy is employed in order to determine the plasma composition. It is shown that in the case of materials with a low ionization fraction (e.g. C) the HPPMS rates are higher by up to 40 % in comparison to the dcMS ones, at all deposition conditions. On the other hand, for materials with a high ionization fraction (e.g. Cr and Cu) the HPPMS R_d values are higher up to 10 % than the dcMS rates for I_Tp < 10 A and V_T < 450 V. A further increase of the I_Tp and V_T results in a drop of the HPPMS R_d values by up to 20 %.