Regensburg 2007 – scientific programme

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DS: Fachverband Dünne Schichten

DS 15: Poster Session

DS 15.63: Poster

Tuesday, March 27, 2007, 15:00–17:00, Poster B

Electronic properties of amorphous and crystalline Germanium Bismuth Tellurides — •Michael Austgen and Matthias Wuttig — Institute of Physics (IA), RWTH Aachen University of Technology, 52064 Aachen, Germany

In data storage applications such as CD-RWs, DVD-RWs or DVD-RAMs phase change materials are already commercially used. The information is stored in bits which can be switched between the crystalline and the amorphous state by a short laser pulse. Desired physical properties of these non-volatile memories are high optical contrast. For future applications in electronic memories such as PC-RAM's the high electrical contrast is an alternative feature.

In this study two different Germanium Bismuth Tellurium alloys were investigated. Both have a low crystallization temperature and were partially crystalline deposited. This is indicative for a low activation barrier against crystallization and could lead to very fast crystallization phenomena at elevated temperatures. To prepare amorphous films substrate cooling was invoked. This enabled the preparation of amorphous films. Subsequently the properties of the amorphous and crystalline state were investigated employing a variety of techniques including x-ray diffraction, x-ray reflectometry, van der Pauw measurements as well as spectroscopic ellipsometry. From these data the suitability of were investigated. Germanium Bismuth Tellurides as ultrafast storage materials has been accessed.