Regensburg 2007 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 16: Organic Light Emitting Diodes (SYOE 9)
DS 16.5: Vortrag
Mittwoch, 28. März 2007, 15:30–15:45, H32
Polymer-based Optoelectronic Devices with Interlayers — •D. Neher1, C. Yin1, X. Yang1, B. Pieper1, B. Stiller1, Th. Kietzke1,2, and H.-H. Hörhold3 — 1Univ. Potsdam, Inst. Physics, 14469 Potsdam, Germany — 2Inst. Mater. Res. & Eng. (IMRE), 117602 Singapor — 3Univ. Jena, Inst. Org. Chem. & Macromol. Chem., 07743 Jena, Germany
Recently, a novel approach to insert ultrahin polymer layers with well-controllable electronic properties into solution-processed optoelectronic device structures has been proposed [1]. This approach allows to establish property-function relationships, which are not accessible by the study of conventional blend device. Experiments on electrophosphorescent devices as well as Kelvin-probe experiments under illumination showed that these layers are dense and exhibit a strong electron-blocking function [2]. Upon proper choice of the HOMO and LUMO level of the interlayer material, efficient recombination of charges at the interface could be realized. Comparable studies on bilayer and solar cell devices based on poly(p-phenylene vinylenes) suggest that the performance of these devices is not determined by charge transport and free carrier recombination. This supports the view that the efficiency to form free carriers is the main limiting factor.
[1] J. S. Kim, R. H. Friend, I. Grizzi, J. H. Burroughes, Appl. Phys. Lett. 87 (2006) 023506.
[2] X.H. Yang, F. Jaiser, B. Stiller, D. Neher, F. Galbrecht, U. Scherf, Adv. Funct. Mater. 16 (2006) 2156