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DS: Fachverband Dünne Schichten
DS 19: Symposium: In situ Optics II
DS 19.1: Invited Talk
Wednesday, March 28, 2007, 17:15–17:45, H34
Optical in-situ diagnostics of device growth in MOVPE — •Martin Zorn1, Frank Brunner1, Thomas Zettler2, and Markus Weyers1 — 1Ferdinand-Braun-Institut für Höchstfrequenztechnik (FBH), Gustav-Kirchhoff-Str. 4, 12489 Berlin, Germany — 2LayTec GmbH, Helmholtzstr. 13-14, 10587 Berlin, Germany
Metal-organic vapour phase (MOVPE) growth of semiconductor device structures is the fundamental technique for the fabrication of todays micro- and opto-electronic devices. The monitoring and control of these growth processes in gas phase environment is highly desired and can only be done by optical technologies.
Here, we report on in-situ diagnostics in MOVPE using normalized reflectance (R), reflectance anisotropy spectroscopy (RAS), optical curvature measurements and emissivity-corrected pyrometry.
In GaAs-based layer structures crucial layer properties like composition, doping, and strain can be determined in-situ. For example, the optical RAS fingerprint of a laser structure includes information about doping and composition. Growth of lattice matched material like AlGaInP on GaAs can be controlled by a combination of reflectance and curvature measurements.
For GaN-based epitaxy in-situ temperature and strain measurements play a crucial role in optimizing the growth process. Sensor based strain engineering of the layer structures is state-of-the-art for yield-enhancement. Recently, reflectance measurements at 400 nm and 950 nm have shown to give direct insight into the growth of (Al,In,Ga)N heterostructures.