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Regensburg 2007 – scientific programme

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DS: Fachverband Dünne Schichten

DS 20: Symposium: Real Time Growth Studies I

DS 20.4: Talk

Thursday, March 29, 2007, 10:15–10:30, H32

In Situ X-ray Diffraction during Pulsed Laser Deposition — •Vedran Vonk1, Mark Huijben2, Kurt Driessen3, Guus Rijnders3, Dave Blank3, Sybolt Harkema3, and Heinz Graafsma41Max-Planck-Institute for Metals Research, Stuttgart, Germany — 2University of California, Berkeley, USA — 3University of Twente, Enschede, The Netherlands — 4Deutsches Elektronen-Synchrotron, Hamburg, Germany

The use of in situ X-ray diffraction for the study of thin film growth enables in a straightforward way to derive the atomic structure, because the kinematical scattering approximation holds. Here we present the results of studying the heteroepitaxial growth by Pulsed Laser Deposition of complex oxides such as the High-Tc superconductor YBa2Cu3O7−x [1] and the insulator LaAlO3 [2] on SrTiO3(001) substrates. A special sample chamber has been constructed to be used with synchrotron X-rays [3]. Detailed pictures of the growth kinetics and of the atomic interface structure at deposition conditions result from fitting quantitatively both the intensity growth oscillations and the crystal truncation rods. The growth of the complex oxide thin films presented here is characterized by substantial interlayer-mass transport and large deviations from the bulk room-temperature atomic structure. The results show the effects of the interplay between formation and diffusion energies on the processes of nucleation and kinetics during heteroepitaxial growth. [1] V.Vonk et al. ESRF Highlights 2004 (2005) [2] V.Vonk et al., Phys. Rev. B (submitted) [3] V.Vonk et al., J. Synchr. Rad. 12 (2005) 833

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