Regensburg 2007 – scientific programme
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DS: Fachverband Dünne Schichten
DS 20: Symposium: Real Time Growth Studies I
DS 20.5: Talk
Thursday, March 29, 2007, 10:30–10:45, H32
Pressure Dependant in-situ Investigations on the Rapid Thermal Processing of CuInS2 Thin Films — •Humberto Rodriguez Alvarez, Immo Michael Kötschau, Alfons Weber, and Hans Werner Schock — Hahn Meitner Institut, Glienicker Str. 100. 14109 Berlin
The solid state transformations taking place during the rapid thermal processing (RTP) for the sulfurization of metallic precursors (Cu,In) were monitored using in-situ energy dispersive X-ray diffraction (EDXRD) experiments at the EDDI beamline of BESSY II (Berlin). The new reaction chamber allows an RTP type processes at high pressure (∼1 mbar) and short heat-up time (550∘C,∼200 K/min), which is considerably different from the process conditions (pmax∼ 10−3 mbar) of a complementary experiment available at HASYLAB (Hamburg). The time resolved analysis of the EDXRD spectra gives information on the reaction pathway leading to the formation of the CuInS2 thin film. The first experiments show a strong pressure dependence of the formation of binary sulfides prior to the formation of the ternary chalcopyrite. The changes in the reaction pathway under variation of the maximum sulfur partial pressure will be discussed.