Regensburg 2007 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 23: Symposium: In situ Optics III
DS 23.1: Vortrag
Donnerstag, 29. März 2007, 10:00–10:15, H34
Optical and electronic properties of the interface between small organic ring molecules and GaAs(001) surfaces — •T. Bruhn1, R. Passmann1,2, M. Kropp1, W. Braun3, M. Kneissl1, W. Richter1,4, N. Esser1,2, and P. Vogt1 — 1TU Berlin, Institute of Solid State Physics, Hardenbergstr. 36, 10623 Berlin, Germany — 2ISAS Berlin, Albert-Einstein-Str. 9, 12489 Berlin, Germany — 3BESSY GmbH, Albert-Einstein-Str. 15, 12489 Berlin, Germany — 4Universita Tor Vergata, Via della Ricerca Scientifica 1, 00133 Roma, Italy
Organic functionalization of semiconductor surfaces represents one of the most promising aspects in recent years. For a systematic installation of functional organic units in semiconductor devices, however, a detailed understanding of the interface formation is crucial. Due to the important role of III-V semiconductors in optoelectronics, we have investigated small ring molecules (cyclopentene (C5H8) and 1,4-cyclohexadiene (C6H8 )) on different GaAs surface reconstructions. The samples were investigated with reflectance anisotropy spectroscopy (RAS), soft X-ray photo electron spectroscopy (SXPS) and scanning tunnelling microscopy (STM). For all reconstructions RAS measurements show that the adsorption of the molecules significantly changes the spectral line shape where surface related transitions of the clean surfaces contribute. Also a clear influence on the linear electro-optical effect (LEO) was observed. Additional molecular components were identified in the valence band spectra. A bonding to the arsenic-atoms is supported by STM measurements and core-level spectroscopy.