Regensburg 2007 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 24: Ion Beam Techniques
DS 24.1: Vortrag
Donnerstag, 29. März 2007, 11:15–11:30, H34
Ion Beam induced Glancing Angle Deposition of silicon nanostructures — •Christian Patzig1, Wilfried Erfurth2, Alexey Milenin2, and Bernd Rauschenbach1 — 1Leibniz Institute of Surface Modification, Permoserstraße 15, 04318 Leipzig, Germany — 2Max Planck Institute of Microstructure Physics, Weinberg 2, 06120 Halle, Germany
Silicon nanostructures such as chevrons, four-fold spirals, screws and vertical posts are grown on Si substrates using ion-beam induced Glancing Angle Deposition (GLAD) at room temperature. GLAD is a deposition technique developed in recent years. Based on a self-shadowing process of particles that reach the substrate under a highly oblique angle (the particle flux typically reaches the substrate under an angle β > 80∘ as measured to the substrate normal), slanted posts will grow in the direction of the incoming flux. Combined with suitable substrate rotation, unique structures can be grown. The structures are grown on bare Si substrates as well as on templates made with Electron Beam Lithography (EBL) and are analyzed by Scanning Electron Microscopy (SEM). The effect of different rotation schemes and the influence of period and size of the template pattern on the growing structure will be discussed. It will be shown that the period of the template pattern, compared to the natural dimension of the structure on the bare substrate, dominates both dimension and periodicity of the grown structures.