Regensburg 2007 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe
DS: Fachverband Dünne Schichten
DS 26: Oxides
DS 26.11: Vortrag
Donnerstag, 29. März 2007, 17:30–17:45, H34
Characterization of GdScO3 layers by Spectroscopic Ellipsometry — Martin Roeckerath, •Jürgen Moers, Jürgen Schubert, and Siegfried Mantl — Institut of Bio- und Nanosystems, Forschungszentrum Jülich, D-52425 Jülich
For further improvement of MOSFET devices high-κ materials for gate dielectrics are under investigation. Rare earth scandates are drawing increasing attention due to their favorable material properties. The κ-value is above 20, the band offsets to silicon are larger than 2 eV and the layers are stable up to 1000∘C. To investigate the properties of those materials, Gadolinium scandate (GdScO3) was selected exemplarily. Layers with different thickness were deposited on silicon (HF last) and oxidized (2 nm) silicon by electron beam evaporation. Their stoichiometry and morphology were characterized by Rutherford Backscattering (RBS), X-ray reflectometry (XRR) and transmission electron microscopy (TEM).
In order to provide a quick and non-destructive characterization method, the samples were measured at angles of 50∘, 60∘ and 70∘ by spectroscopic ellipsometry (SE) and the results were compared to the other measurements. The optical data of GdScO3 were described analytically by a Sellmeier formula with 5 parameters. It was found that the measured thicknesses of SE and XRR are in agreement for film thicknesses above 10 nm. Below 10 nm SE overestimates the thickness by far, indicating the increasing influence of the substrate/GdScO3 interface.