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Regensburg 2007 – scientific programme

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DS: Fachverband Dünne Schichten

DS 26: Oxides

DS 26.3: Talk

Thursday, March 29, 2007, 15:30–15:45, H34

Epitaxially stabilized growth of orthorhombic LuScO3 thin films — •Tassilo Heeg1, Martin Roeckerath1, Jürgen Schubert1, Willi Zander1, Christoph Buchal1, Han Yuan Chen2, Chunlin Jia2, Yunfa Jia3, Carolina Adamo3, and Darrell G. Schlom31Institute of Bio- and Nanosystems (IBN1-IT), and Centre of Nanoelectronic Systems for Information Technology (cni), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany — 2Ernst-Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C), and Institute of Solid State Research (IFF), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany — 3Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802-5005, USA

Lutetium scandate (LuScO3) thin films of 10 - 800 nm in thickness have been prepared by molecular beam epitaxy and pulsed laser deposition on different substrates. Stoichiometry and crystallinity were investigated using Rutherford backscattering spectrometry/channelling, X-ray diffraction and transmission electron microscopy. The results indicate that LuScO3, which normally only exists as solid solution of Sc2O3 and Lu2O3, could be grown in the orthorhombically distorted perovskite structure. A good crystalline quality (rocking curve FWHM of 0.05) was gained, and a critical film thickness of around 200 nm for the epitaxial stabilization of the perovskite phase of LuScO3 on NdGaO3(110) substrates was determined.

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