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Regensburg 2007 – scientific programme

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DS: Fachverband Dünne Schichten

DS 26: Oxides

DS 26.7: Talk

Thursday, March 29, 2007, 16:30–16:45, H34

GaPO4 epitaxial thin films: Growth and thermal stability — •Johannes Pedarnig, Stefan Roither, Martin Peruzzi, and Dieter Bäuerle — Institut für Angewandte Physik, Johannes Kepler Universität Linz, A-4040 Linz

Gallium orthophosphate (GaPO4) is an outstanding novel piezoelectric material that remains piezoelectric up to a temperature of 970C. Crystalline GaPO4 films have not been reported so far due to the complex materials chemistry.

We are reporting on solid phase epitaxial growth of GaPO4 thin films on alpha - quartz (SiO2) substrates. Amorphous stoichiometric precursor layers are fabricated by pulsed-laser deposition on (001) SiO2 substrates and are subsequently transformed to crystalline GaPO4 by post-annealing in air at elevated temperature. Epitaxial films with thicknesses up to 300 nm exhibit strong in-plane and out-of-plane textures (angular widths < 0.6). Long-term annealing in air at temperatures above the alpha - to beta - phase transition of the quartz substrate (573C) does not degrade these films.

This work is supported by the Austrian Federal Ministry of Economics and Labour (Micro@Nanofabrication Austria network) and the European Science Foundation (Thin Films for Novel Oxide Devices project).

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