DS 28: Silicon Thin Films and Interfaces
Freitag, 30. März 2007, 11:30–12:45, H32
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11:30 |
DS 28.1 |
Evaluation of Low-Temperature SiOx as an Insulating Barrier — •Oliver Senftleben, Peter Iskra, Tanja Stimpel-Lindner, Ignaz Eisele, and Hermann Baumgärtner
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11:45 |
DS 28.2 |
Thermische CVD-Abscheidung von Si-C-Schichten — Oliver Dirsus, •Dieter Mergel und Volker Buck
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12:00 |
DS 28.3 |
Nanometer thick antireflection coating for infrared light — •Bruno Gompf, Jürgen Beister, Tobby Brandt, Jens Pflaum, and Martin Dressel
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12:15 |
DS 28.4 |
Influence of fluorine contamination on semiconductor wafer probing — •Markus Reinl, Torsten Sulima, Ignaz Eisele, Oliver Nagler, and Florian Kaesen
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12:30 |
DS 28.5 |
Influence of in-situ phosphorus doping on crystal quality of MBE grown silicon — •Ulrich Abelein, Lothar Höllt, Torsten Sulima, and Ignaz Eisele
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