Regensburg 2007 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 28: Silicon Thin Films and Interfaces
DS 28.1: Vortrag
Freitag, 30. März 2007, 11:30–11:45, H32
Evaluation of Low-Temperature SiOx as an Insulating Barrier — •Oliver Senftleben, Peter Iskra, Tanja Stimpel-Lindner, Ignaz Eisele, and Hermann Baumgärtner — Universität der Bundeswehr München, Institut für Physik, Werner-Heisenberg-Weg 39, 85577 Neubiberg
Lowering the thermal budget in silicon process technology is one essential demand for the future. Feasibility of abrupt doping profiles or the application of new materials like SiGe, C60 or organic materials highly depends on a low-temperature insulating layer.
Therefore we investigated silicon suboxides which were deposited in a UHV-chamber by sublimation of silicon in oxygen atmosphere. Electrical quality of the oxide layers is the essential figure of merit. The main parameters for optimization are substrate temperature, oxygen partial pressure, silicon sublimation rate and appropriate annealing conditions. Oxygen partial pressure has been varied between 10−5 to 10−2 mbar, sample temperatures between 400∘C and 600∘C and the influence of in-situ annealing in oxygen, hydrogen and UHV at different temperatures has been studied.
Special interest has been taken on double layer systems consisting of thermally grown silicondioxide layers between 2.3 nm and 10 nm and subsequent deposition of SiOx layers between 10 nm and 50 nm in thickness. These samples were electrically characterized by IV- and CV/GV-measurements in a MIS-structure. Morphology of the layers was investigated by SEM and AFM and the thickness and stoichiometry by AES and ellipsometry.