Regensburg 2007 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 4: Nanoengineered Thin Films

DS 4.1: Vortrag

Montag, 26. März 2007, 11:15–11:30, H34

Dewetting of Ni thin films and formation of nanorods on ripple patterned substrates — •Jan Petersen und S. G. Mayr — I. Physikalisches Institut, University of Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany

Self-organisation processes are currently of particular interest due to the need of higher structure densities to increase the performance of electronic devices. They might also replace expensive and time consuming lithography processes. We investigated the dewetting process of thin Ni films during thermal annealing on smooth and ripple patterned silicon dioxide. The ripple pattern was created by ion etching under oblique incidence and has a corrugation wavelength of about 50nm. Scanning electron microscopy images show a faster decrease of Ni surface coverage on the ripple pattern with increasing temperature indicating an additional driving force of curvature induced diffusion. The ridges act as diffusion barriers trapping Ni in the valleys. Finding the adequate film thickness and annealing temperature this leads to the formation of nanorods or nanowires. Electrical resistance was measured to analyze the dynamics of the dewetting process.

Financial support by the DFG - SFB 602, TP B3 is acknowledged.