Regensburg 2007 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 9: Hard Coatings II
DS 9.1: Vortrag
Montag, 26. März 2007, 15:15–15:30, H34
High Quality Cubic Boron Nitride Films - A Starting Point for Doping Experiments — •Hong Yin1, Ivan Pongrac1, Xuyang Wang1, Hans-Gerd Boyen1, Paul Ziemann1, Bastien Dohuard2, Laurent Houssiau2, and Carla Bittencourt3 — 1Institute of Solid State Physics, University of Ulm, D-89081 Ulm, Germany — 2LISE, University of Namur, B-5000 Namur, Belgium — 3Materia Nova, B-7000 Mons, Belgium
After the successful demonstration that c-BN films can be epitaxially grown at 900°C on top of (001)-oriented diamond substrates [1], such high quality samples serve as starting point for their doping with Si atoms. For this purpose, a small stripe of a Si-wafer is co-sputtered during the c-BN deposition and the resulting concentration of Si as well as of unintentionally incorporated contaminants are determined by XPS, AES for near surface concentrations and ToF-SIMS for depth profiling. These results will be related to first temperature-dependent resistance measurements.
[1] X.W. Zhang, H.-G. Boyen, N. Deyneka, P. Ziemann, F. Banhart, M. Schreck, Nature Materials 4 (2003) 312.