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DS: Fachverband Dünne Schichten

DS 9: Hard Coatings II

DS 9.1: Vortrag

Montag, 26. März 2007, 15:15–15:30, H34

High Quality Cubic Boron Nitride Films - A Starting Point for Doping Experiments — •Hong Yin¹, Ivan Pongrac¹, Xuyang Wang¹, Hans-Gerd Boyen¹, Paul Ziemann¹, Bastien Dohuard², Laurent Houssiau², and Carla Bittencourt³ — ¹Institute of Solid State Physics, University of Ulm, D-89081 Ulm, Germany — ²LISE, University of Namur, B-5000 Namur, Belgium — ³Materia Nova, B-7000 Mons, Belgium

After the successful demonstration that c-BN films can be epitaxially grown at 900°C on top of (001)-oriented diamond substrates [1], such high quality samples serve as starting point for their doping with Si atoms. For this purpose, a small stripe of a Si-wafer is co-sputtered during the c-BN deposition and the resulting concentration of Si as well as of unintentionally incorporated contaminants are determined by XPS, AES for near surface concentrations and ToF-SIMS for depth profiling. These results will be related to first temperature-dependent resistance measurements.

[1] X.W. Zhang, H.-G. Boyen, N. Deyneka, P. Ziemann, F. Banhart, M. Schreck, Nature Materials 4 (2003) 312.