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So, 14:00–17:00 |
H1 |
HL 1: Tutorial on Semiconductor Spintronics |
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Mo, 09:15–10:00 |
H15 |
HL 2: Invited Talk Wegener |
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Mo, 10:00–10:45 |
H15 |
HL 3: Invited Talk Sebald |
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Mo, 10:45–13:00 |
H13 |
HL 4: Semiconductor Laser I |
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Mo, 11:00–13:15 |
H14 |
HL 5: Photovoltaic |
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Mo, 11:00–13:00 |
H15 |
HL 6: Quantum dots and wires: preparation and characterization I |
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Mo, 11:00–13:00 |
H17 |
HL 7: III-V semiconductors I |
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Mo, 14:00–14:45 |
H15 |
HL 8: Invited Talk Fischer |
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Mo, 14:45–17:15 |
H13 |
HL 9: Semiconductor Laser II |
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Mo, 14:45–16:00 |
H14 |
HL 10: Organic semiconductors |
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Mo, 14:45–17:30 |
H15 |
HL 11: Quantum dots and wires: Transport properties I |
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Mo, 14:45–18:00 |
H17 |
HL 12: Quantum dots and wires: Optical properties I |
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Mo, 15:00–17:30 |
Poster A |
HL 13: Poster 1 |
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Mo, 16:00–17:30 |
H14 |
HL 14: Si/Ge |
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Mo, 17:15–18:00 |
H13 |
HL 15: Preparation and characterization |
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Di, 09:15–10:00 |
H15 |
HL 16: Invited Talk Norris |
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Di, 10:00–10:45 |
H15 |
HL 17: Invited Talk Limmer |
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Di, 10:45–12:45 |
H13 |
HL 18: Photonic crystals I |
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Di, 10:45–13:00 |
H14 |
HL 19: Spin controlled transport I |
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Di, 10:45–12:45 |
H15 |
HL 20: Symposium Bose-Einstein Kondensation in Halbleitern |
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Di, 11:00–13:00 |
H17 |
HL 21: III-V semiconductors II |
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Di, 14:00–16:45 |
H13 |
HL 22: Photonic crystals II |
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Di, 14:00–16:00 |
H14 |
HL 23: Spin controlled transport II |
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Di, 14:00–17:00 |
H15 |
HL 24: Quantum dots and wires: Transport properties II |
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Di, 14:00–17:00 |
H17 |
HL 25: Quantum dots and wires: Optical properties II |
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Di, 16:00–17:00 |
H14 |
HL 26: Interfaces/surfaces |
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Mi, 14:15–17:30 |
H13 |
HL 27: II-VI semiconductors |
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Mi, 14:15–16:30 |
H14 |
HL 28: Optical properties |
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Mi, 14:15–16:45 |
H15 |
HL 29: Symposium THZ interactions |
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Mi, 14:15–14:45 |
H17 |
HL 30: Hybrid systems |
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Mi, 14:45–18:00 |
H17 |
HL 31: Quantum dots and wires: Optical properties III |
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Mi, 16:30–18:00 |
H14 |
HL 32: C/diamond |
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Mi, 16:45–17:45 |
H15 |
HL 33: New materials |
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Do, 09:15–10:00 |
H15 |
HL 34: Invited Talk Reuter |
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Do, 10:00–12:45 |
H13 |
HL 35: Devices |
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Do, 10:00–12:15 |
H14 |
HL 36: Heterostructures |
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Do, 10:00–12:30 |
H15 |
HL 37: Symposium Graphene |
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Do, 10:00–13:00 |
H17 |
HL 38: ZnO I |
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Do, 12:15–13:00 |
H14 |
HL 39: Impurities/amorphous semiconductors |
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Do, 12:30–13:00 |
H15 |
HL 40: SiC |
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Do, 12:45–13:00 |
H13 |
HL 41: Metal-insulator transitions |
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Do, 14:00–16:15 |
H13 |
HL 42: GaN: devices |
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Do, 14:00–15:45 |
H14 |
HL 43: Theory of electronic structure |
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Do, 14:00–18:15 |
H15 |
HL 44: Semiconductor Microcavities and Entangled States in Quantum Dots |
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Do, 14:00–17:30 |
H17 |
HL 45: ZnO II |
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Do, 15:00–17:30 |
Poster A |
HL 46: Poster 2 |
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Do, 15:45–18:15 |
H14 |
HL 47: Transport in high magnetic field/quantum-Hall-effect |
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Do, 16:15–18:00 |
H13 |
HL 48: Quantum dots and wires: preparation and characterization II |
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Do, 17:30–18:15 |
H17 |
HL 49: Graphene |
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Fr, 10:15–11:00 |
H15 |
HL 50: Invited Talk Schmult |
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Fr, 11:00–13:30 |
H13 |
HL 51: GaN: preparation and characterization |
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Fr, 11:00–13:30 |
H14 |
HL 52: Transport properties |
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Fr, 11:00–13:45 |
H15 |
HL 53: Ultra fast phenomena |
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