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HL: Fachverband Halbleiterphysik
HL 11: Quantum dots and wires: Transport properties I
HL 11.6: Talk
Monday, March 26, 2007, 16:15–16:30, H15
New aspects of electronic transport in GaAs/AlAs nanocolumns — •Mihail Ion Lepsa1, Klaus Michael Indlekofer1, Jakob Wensorra1, Katharina Peter1, Arno Förster2, Hans Lüth1, and Detlev Grützmacher1 — 1Center of Nanoelectronic Systems for Information Technology (IBN-1), Forschungszentrum Jülich GmbH, 52425 Jülich — 2Fachhochschule Aachen, Abteilung Jülich, Physikalische Technik, Ginsterweg 1, 52428 Jülich
Vertical sub-100nm GaAs nanocolumns with an embedded GaAs/AlAs resonant tunneling heterostructure have been processed using a top down approach [1, 2].
Electronic transport properties are investigated using DC electrical measurements. The results show that specific discrete features in the energy spectrum of the structure can be probed even at room temperature. We observe a multi-peaked I-V curve which is enhanced for a certain range of column diameters. The experimental findings can be explained qualitatively by a transport model based on a non-uniform lateral quantization profile. The latter results from the formation of a saddle-point in front of the double barrier quantum well (DBQW) region [1].
[1] J. Wensorra, K.M. Indlekofer, M.I. Lepsa, A. Förster, and H. Lüth, Nano Letters, 5, 2470 (2005).
[2] J. Wensorra, M.I. Lepsa, K.M. Indlekofer, A. Förster, P. Jaschinsky, B. Voigtländer, G. Pirug, and H. Lüth, Phys. Stat. Sol. (a) 203, 3559 (2006).