Regensburg 2007 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 13: Poster 1

HL 13.21: Poster

Monday, March 26, 2007, 15:00–17:30, Poster A

Effect of localized B and N states on the magneto-transport of (B,Ga,In)As and (Ga,In)(N,As) — •Jörg Teubert¹, Peter Klar², Wolfram Heimbrodt¹, Volker Gottschalch³, Andrew Lindsay⁴, and Eoin OReilly⁴ — ¹Faculty of Physics and Material Sciences Center, Philipps-University of Marburg, Germany — ²1. Physics Institute Justus Liebig University of Giessen, Germany — ³Faculty of Chemistry and Mineralogy, University of Leipzig, Germany — ⁴Tyndall National Institute, Lee Maltings, Cork, Ireland

The incorporation of both B or N into GaAs is expected to cause the formation of highly localized levels resonant with the conduction band. Whereas in the case of N the interaction between these localized levels and extended band states has considerable effect on the electonic band structure, the effects of B-incorporation on the electronic properties are generally believed to be rather small.

Magneto-transport properties of n- and p-type (B,Ga,In)As and (Ga,In)(N,As) were studied in the temperature range from 2 to 300 K and in magnetic fields up to 10 T and at hydrostatic pressures up to 16 kbar. The magneto-transport in (B,Ga,In)As and (Ga,In)(N,As) is very similar. P-type samples show normal semiconductor behaviour whereas the electron transport in both alloys is strongly affected by the interaction of the free carriers with the density of states of localized B and N impurity states, respectively. A possible transition from band-like transport to hopping-like transport in (B,Ga,In)As at low temperature and low carrier concentration or high pressure will be discussed.