Regensburg 2007 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 13: Poster 1

HL 13.37: Poster

Monday, March 26, 2007, 15:00–17:30, Poster A

Temperature dependent MOVPE growth of InN quantum dots investigated by in-situ spectroscopic ellipsometry — •Simon Ploch, Christian Meissner, Massimo Drago, Markus Pristovsek, and Michael Kneissl — Technische Universität Berlin, Institute of Solid States Physics, Hardenbergstrasse 36, 10623 Berlin, Germany

The band edge of indium nitride is the lowest among the nitride semiconductors. A successful growth of InN quantum dots is promissing for possible applications in infrared LEDs and laser diodes. This work presents in-situ spectroscopic ellipsometry (SE) measurements of non-capped MOVPE grown quantum dots on GaN/sapphire, which allows to control their properties during the formation process.
In a first series we varied the temperature between 540^∘C and 620^∘C by a constant V/III ratio of 15.000. SE reveals a strong dependence on the growth rate, dot formation and density by the temperature. In order to an correctly interpretation of the in-situ SE data, the epitaxial structures are characterised ex-situ by atomic force microscopy (AFM) and photoluminescence. The additional influence on the quantum dot size is given by different growth times, between 30 s and 4 min, and verified by the AFM measurements. Finally, we have analyzed the effects of different V/III ratios.