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HL: Fachverband Halbleiterphysik

HL 13: Poster 1

HL 13.48: Poster

Montag, 26. März 2007, 15:00–17:30, Poster A

Optical properties of Mn-doped ZnS nanowires — Daniel Stichtenoth¹, Sebastian Geburt¹, Tobias Niebling², Peter J Klar², and •Carsten Ronning¹ — ¹II. Institute of Physics, University of Göttingen — ²Dept. of Physics, University of Marburg

Doping of semiconductor nanostructures via ion implantation offers the advantage of precise control of the doping concentration in both lateral and depth direction beyond any solubility limit. In this study, single crystal ZnS nanowires with varying diameter were synthesized according to the VLS mechanism and subsequently dispersed on top of Si substrates. The nanowires were implanted with 55Mn choosing varying ion fluences over 6 orders of magnitude. The range of the ions, set by the implantation energy, matched the diameter of the nanowires, and post-implantation annealing procedures were done under vacuum conditions in order to remove the introduced damage. Electron spin resonance measurements showed that after these procedures the Mn substitute Zn sites in the lattice. The treated nanowires were investigated by time resolved PL measurements, where the well-known long-living 4T1 - 6A1 intra 3d transition of Mn+2 was observed. Correlations between the lifetime of this intra 3d transition and the Mn concentration as well as the diameter of the wires will be discussed in detail.