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HL: Fachverband Halbleiterphysik
HL 13: Poster 1
HL 13.50: Poster
Monday, March 26, 2007, 15:00–17:30, Poster A
Tunable quantum dots in InAs nanowires — •Marc Scheffler1, Stevan Nadj-Perge1, Leo P. Kouwenhoven1, Magnus T. Borgström2, and Erik P. A. M. Bakkers2 — 1Kavli Institute of NanoScience, Delft University of Technology, POB 5046, 2600GA Delft, The Netherlands — 2Philips Research Laboratories, High Tech Campus 4, 5656 AE Eindhoven, The Netherlands
Semiconductor nanowires are a versatile system to study electronic transport at mesoscopic length scales. Here InAs nanowires are particularly interesting due to the large spin-orbit coupling and furthermore promising for devices due to the comparably easy processing for Ohmic contacts.
We study the electronic transport in of individual InAs nanowire devices at low temperatures. Here we use different gate geometries to tune the charge carrier density either globally (for the complete wire) or locally. In particular, we use local top gates to create barriers that define tunable quantum dots. Towards our final goal of spin manipulation of single electrons, we focus on a tunable double dot. We present stability diagrams and discuss the influence of different quantum dot geometries.