Regensburg 2007 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 13: Poster 1

HL 13.71: Poster

Monday, March 26, 2007, 15:00–17:30, Poster A

DC-transport characteristics of Silicon-on-Insulator FET with 55nm thick silicon films at low doping levels — •Pagra Truman, Petra Uhlmann, and Manfred Stamm — Leibniz Institute of Polymer Research Dresden, Hohe Str. 6, Germany

Silicon-on-Insulator (SOI) FET with nanoscale silicon films at low doping levels have potential for (bio-)sensing applications but still the device properties are not fully understood yet: With decreasing film thickness the energy band structure of the silicon film becomes strongly affected by the existence of interfacial states. Furthermore for film thicknesses below the maximum depletion length the device properties can no longer be described by a semiclassical approach. We investigate n-channel normally-on SOIFET devices and observe for positive gate bias close to ideal MOSFET device characteristics whereas for negative gate bias the transistor does not turn to the off-state but instead becomes insensitive to the gate. Additonally the impact of the W/Ti and Ti/Au metal contacts on the device properties is studied: Exceeding a certain gate voltage level device characteristics become similar to the ones of a Schottky-barrier MOSFET. It is worth mentioning that the W/Ti and Ti/Au contacts have not been annealed.