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HL: Fachverband Halbleiterphysik
HL 13: Poster 1
HL 13.74: Poster
Montag, 26. März 2007, 15:00–17:30, Poster A
The design and fabrication of an electron pump with in-plane gate transistors by focused ion beam implantation — •M. Draghici, D. Salloch, A. Melnikov, D. Reuter, and A. D. Wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, Universitätsstr. 150, 44780 Bochum
In the last decade, there has been a considerable interest especially in the metrological community to design and develop a device capable to deliver a current with an extremely high accuracy. The Coulomb blockade and single electron tunneling effects in small junctions made possible devices, which manipulate individual electrons [1]. A drawback is the very sophisticated routine for tuning and operating the pump. Another approach was to fabricate devices for which the charge transport through an 1D-channel formed in an AlxGa1−xAs heterostructure is done using surface acoustic waves of few GHz [2]. The advantage is that the current extends to the nanoampere range. We present an electron pump with in-plane gate (IPG) transistors [3] fabricated by focused ion beam implantation. Although, the device is operating at low frequencies (tens of kHz), it is capable to produce a current more than one order of magnitude higher than the electron pumps based on Coulomb blockade and single electron tunneling effects. The maskless fabrication process does not require any alignment between the sources, the drains and the gates of the IPG transistors.
[1] L. J. Geerligs et al., Phys. Rev. Lett. 64, 2691 (1990).
[2] V. I. Talyanskii et al., Phys. Rev. B 56, 15180 (1997).
[3] A. D. Wieck, K. Ploog, Appl. Phys. Lett. 56, 928 (1990).