Regensburg 2007 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 14: Si/Ge

HL 14.2: Talk

Monday, March 26, 2007, 16:15–16:30, H14

Structural and electronic properties of ultra-thin polycrystalline Si layers on glass substrates — Tobias Antesberger, •Christian Jaeger, Michael Scholz, and Martin Stutzmann — Walter Schottky Institut, Am Coulombwall 3, 85748 Garching, Germany

Polycrystalline silicon thin films on glass substrates are attractive for large area electronics and solar cell applications. A promising method to obtain large-grained high quality polycrystalline films by re-crystallization of an amorphous precursor material is the aluminum-induced layer exchange (ALILE). Here, an Al/amorphous Si layer stack, separated by a thin oxide film, is annealed at temperatures up to the eutectic temperature of 577 °C, leading to an exchange of the positions of the initial layers and the crystallization of the amorphous Si. We have studied the structural properties of ultra-thin polycrystalline layers (10 nm - 100 nm) prepared with ALILE by means of X-ray diffraction measurements and Raman spectroscopy, providing evidence of a good crystalline quality. The electronic properties investigated by conductivity and Hall effect measurements show a decreasing carrier density and an increasing mobility with increasing layer thickness. Hydrogen passivation leads to partially depleted layers due to compensation caused by surface states. This effect is investigated by electron spin resonance and spin-dependent transport.