HL 14: Si/Ge
Montag, 26. März 2007, 16:00–17:30, H14
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16:00 |
HL 14.1 |
Defect band formation at grain boundaries in laser-crystallized polycrystalline SiGe thin films — •M. Weizman, L.-P. Scheller, N. H. Nickel, and B. Yan
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16:15 |
HL 14.2 |
Structural and electronic properties of ultra-thin polycrystalline Si layers on glass substrates — Tobias Antesberger, •Christian Jaeger, Michael Scholz, and Martin Stutzmann
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16:30 |
HL 14.3 |
Study of the disproportionation in bulk amorphous germanium monoxide — •Andreas Schacht, Christian Sternemann, Achim Hohl, Henning Sternemann, Michael Paulus, and Metin Tolan
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16:45 |
HL 14.4 |
Metallic conduction in undoped laser-crystallized polycrystalline silicon-germanium thin films — •L.-P. Scheller, M. Weizman, N. H. Nickel, and B. Yan
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17:00 |
HL 14.5 |
Low-temperature molecular beam epitaxy on polycrystalline Si and Ge seed layers — •Michael Scholz, Yuelong Huang, Sebastian Gatz, Andreas Lambertz, Friedhelm Finger, Reinhard Carius, and Martin Stutzmann
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17:15 |
HL 14.6 |
Functional Spin-Coated Nanocrystalline Silicon Layers on Plastic Substrates — •Robert Lechner, Roland Dietmüller, Andre R. Stegner, Rui N. Pereira, Martin S. Brandt, André Ebbers, Frank-Martin Petrat, Martin Trocha, Hartmut Wiggers, and Martin Stutzmann
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