Regensburg 2007 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 19: Spin controlled transport I
HL 19.2: Vortrag
Dienstag, 27. März 2007, 11:00–11:15, H14
Spin transport anisotropy in (110) GaAs — •Odilon D. D. Couto Jr1, Fernando Iikawa2, Jörg Rudolph1, Rudolf Hey1, and Paulo V. Santos1 — 1Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin, Germany — 2Universidade Estadual de Campinas, IFGW, CP-6165, Campinas-SP, 13083-970, Brazil
Mobile piezoelectric potentials are used to coherently transport electron spins in GaAs (110) quantum wells (QW) over distances exceeding 60 µm. We demonstrate that the dynamics of mobile spins under external magnetic fields depends on the direction of motion in the QW plane. The weak piezoelectric fields impart a non-vanishing average velocity to the carriers, allowing for the direct observation of the carrier momentum dependence of the spin polarization dynamics. While transport along [001] direction presents high in-plane spin relaxation rates, transport along [110] shows a much weaker external field dependence due to the non-vanishing internal magnetic field. We show that the anisotropy is an intrinsic property of the underling GaAs matrix, associated with the bulk inversion asymmetry contribution to the SO-coupling.