Regensburg 2007 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 21: III-V semiconductors II

HL 21.5: Talk

Tuesday, March 27, 2007, 12:00–12:15, H17

Temperature dependent Electron Landé g-Factor and Interband Matrix Element in GaAs — •Jens Hübner, Stefanie Döhrmann, Daniel Hägele, and Michael Oestreich — Institute for Solid State Physics, Gottfried Wilhelm Leibniz University Hannover, Appelstr. 2, 30167 Hannover

High precision measurements of the electron Landé g-factor in GaAs are presented using spin quantum beat spectroscopy at low excitation densities and temperatures ranging from 2.6 to 300 K. Influences of nuclear spin polarization at low temperatures have been fully compensated. Comparing these measurements with available data for the temperature dependent effective mass reveals an unexpected strong temperature dependence of the interband matrix element and resolves a long lasting discrepancy between experiment and kp - theory. The strong decrease of the interband matrix element with increasing temperature is explained by phonon induced fluctuations of the interatomic spacing and adiabatic following of the electrons.