HL 21: III-V semiconductors II
Tuesday, March 27, 2007, 11:00–13:00, H17
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11:00 |
HL 21.1 |
The Mn Acceptor in InAs: Depth-Dependent Shape and Supression of the Conduction Band — Jens Wiebe, •Felix Marczinowski, Jian-Ming Tang, Michael E. Flatté, Markus Morgenstern, and Roland Wiesendanger
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11:15 |
HL 21.2 |
Exciton transport by surface acoustic waves — •Jörg Rudolph, Rudolf Hey, and Paulo Santos
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11:30 |
HL 21.3 |
The Fe center in III-V and II-VI semiconductors — •Enno Malguth and Axel Hoffmann
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11:45 |
HL 21.4 |
Formation of MOVPE grown InAs quantum dots on GaAs(001):Si investigated with in-situ STM — •Raimund Kremzow, Markus Pristovsek, Bert Rähmer, Markus Breusing, Michael Kneissl, and Wolfgang Richter
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12:00 |
HL 21.5 |
Temperature dependent Electron Landé g-Factor and Interband Matrix Element in GaAs — •Jens Hübner, Stefanie Döhrmann, Daniel Hägele, and Michael Oestreich
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12:15 |
HL 21.6 |
Spin Noise Spectroscopy in GaAs — •Michael Römer, Jens Hübner, and Michael Oestreich
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12:30 |
HL 21.7 |
Scanning Tunneling Spectroscopy of Si donors in GaAs {110} — •K. Teichmann, M. Wenderoth, S. Loth, and R. G. Ulbrich
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12:45 |
HL 21.8 |
GaMnAs grown on (001), (311) and (110) GaAs — •Ursula Wurstbauer, Dieter Schuh, and Werner Wegscheider
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