Bereiche | Tage | Auswahl | Suche | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 26: Interfaces/surfaces

HL 26.1: Vortrag

Dienstag, 27. März 2007, 16:00–16:15, H14

Exact solution for the capacitance of a current-free Schottky diode — •Matthias Schmidt, Holger von Wenckstern, Rainer Pickenhain, and Marius Grundmann — Universität Leipzig, Institut für Experimentelle Physik II, Halbleiterphysik, Linnéstraße 5

C-V measurements on Schottky diodes are a widely used technique to determine doping profiles and barrier heights of the sample. Commonly the Schottky approximation (completely depleted space charge region) is assumed to be valid. This is not the case for moderate forward bias. We present an exact solution for the capacitance of a homogenously doped space charge region considering free carriers. Within the framework of this solution the free carrier concentration in the bulk material of a Schottky diode can be extracted from C-V data measured at different temperatures. The theoretical results will be used to evalutate experimental data.