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HL: Fachverband Halbleiterphysik
HL 26: Interfaces/surfaces
HL 26.4: Vortrag
Dienstag, 27. März 2007, 16:45–17:00, H14
electron microscopy on axiotaxy of CrSi2 on Si(001) - from the micrometer- to the angstrom-scale — •Meiken Falke1, Frank Allenstein1, Olga Filonenko1, Gunter Beddies1, Steffen Schulze1, Michael Hietschold1, Koen De Keyser2, and Christophe Detavernier2 — 1Instute of Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany — 2Universiteit Gent, Dept. of Solid-state Science, Krijgslaan 281/S1, 9000 Gent, Belgium
A recently [1] identified new type of thin film texture, the so-called axiotaxy, was found in thin CrSi2 films on Si (001) substrate. The films were grown under UHV conditions by MBE using a thin template. Two different epitaxial orientations forming additional domains respectively were identified using TEM and XRD. Additionally, EBSD and XRD pole-figures show a considerable part of the silicide film to consist of small crystallites with a texture axis inclined to the substrate. This texture with the rotation axis different from the substrate surface normal, called axiotaxy, provides one-dimensional periodicity at the crystallite substrate interface which seems to be energetically preferred and representing an initial growth state, probably common in many thin film systems. In particular CrSi2 planes with plane distances close to the Si (110)- type distance are parallel to the four on Si(001) possible (110)-type substrate planes. The one-dimensional periodicity at the interface was investigated by conventional high resolution and aberration corrected transmission electron microscopy.
[1] C. Detavernier at al., Nature 426 (6979): 641-645 DEC 11 2003