Regensburg 2007 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 27: II-VI semiconductors
HL 27.2: Talk
Wednesday, March 28, 2007, 14:30–14:45, H13
Characterization of MgxZn1−xO-layers grown by plasma assisted molecular beam epitaxy — •Thomas Andreas Wassner, Bernhard Laumer, Stefan Maier, Martin Stutzmann, and Martin Eickhoff — Walter Schottky Institut, Technische Universität München, Am Coulombwall 3, 85748 Garching, Germany
MgxZn1−xO layers have been grown epitaxially on (0001)- and (11-20)-sapphire by plasma assisted molecular beam epitaxy. Structural analysis was carried out by high resolution X-ray diffraction to extract the lattice parameters as well as the density of edge- and screw dislocations as a function of the Mg content. The impact of Mg incorporation on the optical properties was investigated by temperature-dependent photoluminescence spectroscopy and photothermal deflection spectroscopy. The corresponding electronic properties were investigated by Hall measurements. Furthermore, the influence of the growth parameters (e.g. the substrate temperature) on the resulting Mg content in the layers will be addressed.