Regensburg 2007 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 27: II-VI semiconductors

HL 27.4: Talk

Wednesday, March 28, 2007, 15:00–15:15, H13

II-VI based magnetic resonant tunneling devices — •Daniel Supp¹, Taras Slobodskyy¹, Anatoly Slobodskyy¹, Tanya Borzenko¹, Charles Gould¹, Georg Schmidt¹, Laurens W. Molenkamp¹, and David Sanchez² — ¹Experimentelle Physik 3, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany — ²Departament de Fisica, Universitat de les Illes Baleares, E-07122 Palma de Mallorca, Spain

Resonant tunneling diodes (RTDs) with magnetic materials are promising spin-transport devices, since their spin-dependent filter effect makes it possible to manipulate and detect the spins of electrons. To realize such a device in ZnMnSe is itself generally quite arduous. We have however developed a technique using a proper buffer stack to not only reliably fabricate them, but also to produce different variations of the layout, as for example RTDs with a magnetic injector, double RTDs or RTDs with a double quantum-well. Structured devices at the micron and sub-micron scale allow us to further analyze them and enhance their usability. Our structures confirm the spin-polarization of the current and gated RTDs are good candidates for transistor effects and studies of vertical quantum dots.

This work was funded in part by the DFG and ONR.