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HL: Fachverband Halbleiterphysik

HL 28: Optical properties

HL 28.4: Vortrag

Mittwoch, 28. März 2007, 15:00–15:15, H14

Optical Deep Level Transient Spectroscopy on ZnO — •R. Weirauch, R. Pickenhain, H. v. Wenckstern, M. Lorenz, G. Biehne, and M. Grundmann — Institut für Experimentelle Physik II,Universität Leipzig, Linnéstraße 5, 04103 Leipzig, Germany

We investigate the optical activity of deep defects in ZnO thin films grown by pulsed laser deposition on sapphire substrates using Optical Deep Level Transient Spectroscopy (ODLTS). The high quality Schottky diodes [1] are investigated by CV, IV, photocurrent spectroscopy and DLTS [2] prior to the ODLTS measurements. Measurements at the low temperature side of the thermal DLTS peak and utilizing a lock- in correlation function are necessary conditions to assure that thermal emission rates from the traps can be neglected [3]. We observe optical induced carrier emission and absorption processes and determine the optical cross sections of deep levels within the space charge region of a Schottky barrier.

[1]	H. v. Wenckstern, G. Biehne, R. A. Rahman, H. Hochmuth,
	M. Lorenz, M. Grundmann, Appl. Phys. Lett. 88, 092102 (2006).
[2]	H. v. Wenckstern, S. Weinhold, G. Biehne, R. Pickenhain,
	H. Schmidt, H. Hochmuth, and M. Grundmann
	Adv. in Sol. Stat. Phys., Vol. 45, 263, (2005).
[3]	R. Pickenhain, H. Schmidt, V. Gottschalch, J. Appl. Phys. 88 2,
	948, (2000).