Regensburg 2007 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 28: Optical properties
HL 28.7: Talk
Wednesday, March 28, 2007, 15:45–16:00, H14
Micro-Photoluminescence studies of individual InP-nanowires grown by low pressure MOVPE — •Steffen Münch1, Stephan Reitzenstein1, Carolin Hofmann1, Alfred Forchel1, Shanna Crankshaw2,3, Linus Chuang2,3, Michael Moewe2,3, and Connie Chang-Hasnain2,3 — 1Technische Physik, Physikalisches Institut, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany — 2Applied Science and Technology group, University of California at Berkeley, Berkeley, California, 94720 — 3Department of Electrical and Computer Engineering, University of California at Berkeley, Berkeley, California, 94720
Optical studies have been performed on individual InP nanowires grown by low pressure MOCVD on B-doped (100) Si substrates using Gold catalysts. By means of micro photoluminescence experiments at low temperature we determined the radial confinement potential of individual nanowires. Confinement energies between 25 and 56 meV were derived which are related to the radial confinement of the electron and hole wave function in nanowires with diameters between 14 and 21 nm. The high quality of the nanowires is reflected in narrow emission peaks with full width at half maximum of only 2 meV. Temperature dependent investigations reveal that thermally activated nonradiative recombination processes lead to a decrease of photoluminescence intensity above approx. 25 K which is associated with a decrease of the photoluminescence decay time from about 2.5 ns at 4 K down to about 1.4 ns at 27 K.