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HL: Fachverband Halbleiterphysik

HL 29: Symposium THZ interactions

HL 29.1: Hauptvortrag

Mittwoch, 28. März 2007, 14:15–14:45, H15

Interaction of semiconductor laser dynamics with THz radiation — •Martin Hofmann — AG Optoelektronische Bauelemente und Werkstoffe, Ruhr-Universität Bochum, 44780 Bochum

We discuss the generation and detection of THz radiation with semiconductor diode lasers. First, we analyse the generation of THz radiation by investigating a semiconductor laser in an external cavity arrangement that supports two colour operation with tunable difference frequency. Weak tunable THz emission is detected directly out of the diode laser, i.e. without external photomixing. We discuss the physical mechanisms underlying this direct THz emission and the potential of this concept in terms of THz bandwidth and an increase of the emitted THz power.

In the second part of the talk, the opposite process, i.e. THz detection with diode lasers is investigated. For that purpose, we inject THz radiation into the active region of a diode laser and analyse its dynamics under this injection. We observe a voltage variation over the p-n-junction depending on the injected THz power and compare the measured signal to the response of a standard Golay cell.

Finally, we review our results with particular emphasis on completely diode-laser based THz imaging or spectroscopy systems.