Regensburg 2007 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 35: Devices

HL 35.1: Vortrag

Donnerstag, 29. März 2007, 10:00–10:15, H13

Recent Advances in Complementary Tunneling FETs — •Martin Sterkel, Bernhard Fabel, Thomas Maul, Linda Nowack, and Walter Hansch — Institute for Technical Electronics, Technical University Munich, Arcisstr. 21, D-80333 München

Scaling MOSFETs becomes more and more difficult. The Tunneling Field Effect Transistor (TFET) is a possible successor of today’s MOSFETs with high scaling capabilities.

The basic structure of the TFET is a reverse biased pin-diode with a MOS-gate on top of the intrinsic region. Depending on the applied gate-source voltage the electrical behaviour between the drain and the source contacts can be switched from the characteristics of a pin-diode to that of an Esaki diode. Hence, the working principle of a TFET is gate controlled interband tunneling. Both a positive and a negative gate-source voltage results in the formation of a tunnel junction, either on the pi- or the ni- interface. Therefore, complementary devices can be fabricated. Since the active region of the device has a lateral extension of approximately 10 nm, the TFET can be scaled down to less than 20 nm without severe short channel effects (SCE).

Planar TFETs were fabricated on silicon substrates by using standard CMOS technology. The p⁺ source and n⁺ drain regions were formed by Rapid Thermal Diffusion from Spin-On-Dopands. The fabrication process and the final devices are completely analyzed by using spectral ellipsometry, SIMS and various electrical measurement techniques. Selected results of these measurements are presented, discussed and compared with simulations.