Regensburg 2007 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 35: Devices
HL 35.6: Vortrag
Donnerstag, 29. März 2007, 11:30–11:45, H13
Characterisation of ultrathin ALD-Al2O3 films in MOS devices — •Bernhard Fabel1, Martin Sterkel1, Thomas Maul1, Linda Nowack1, Walter Hansch1, Florian Speck2, Kunyuan Gao2, Thomas Seyller2, and Lothar Ley2 — 1Institute for Technical Electronics, Technical University Munich, Arcisstr. 21, D-80333 München — 2Institute for Technical Physics, University Erlangen-Nürnberg, Erwin-Rommel-Str. 1, D91058 Erlangen
We present to you a comprehensive study of the electrical impact of different precursors and post deposition treatments to the ALD system of aluminium oxide. These ultrathin (EOT<2 nm) aluminium oxide Al2O3 films were fabricated with different secondary precursors in an standard ALD furnace. The focus was on ozon and water synthesised films as well as mixed processes using both precursors. The electrical parameters were obtained from MOS capacitances and MOSFET devices, leading to a complete evaluation of the film properties for future CMOS applications. Additional physical characterisations (TEM, XPS, etc.) allow to match the electrical behaviour with the microscopic structure of the films in dependence of depostion conditions.