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HL: Fachverband Halbleiterphysik

HL 35: Devices

HL 35.7: Vortrag

Donnerstag, 29. März 2007, 11:45–12:00, H13

Butted Source Contact Field Effect Transistor — •Marcus Weis, Michael Fulde, and Doris Schmitt-Landsiedel — Lehrstuhl für Technische Elektronik, TU München

With scaling technology and smaller feature sizes alternative transistor structures gain momentum as replacement or in addition to traditional CMOS technology. In this work we investigate a novel device, the Butted Source Contact Field Effect Transistor (BSC-FET).

An experimental BSC device was investigated with a structure similar to the MOSFET structure, where the deep implants at source and drain are different. However the channel source and drain extension implants are equal as in a MOSFET. This BSC-FET is representative for a device with a very shallow source implant. The impact of this structure regarding general device behaviour and consequences for circuit design is objective to this investigation.

Implementation into 130nm, 90nm, 65nm standard processes are presented and compared. The BSC-FET offers better short channel effects like reduction of Drain Induced Barrier Lowering (DIBL). The output conductance is lower compared to CMOS which is especially interesting for analog applications. In some applications the integrated substrate contact can be of advantage, as it can reduce total chip area up to 3%. Due to the inherent substrate contact of the BSC-FET a tripple well process is needed for stacked devices.