Regensburg 2007 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 38: ZnO I

HL 38.3: Vortrag

Donnerstag, 29. März 2007, 10:30–10:45, H17

The influence of entropy on the capture cross-section determination in ZnO — Heidemarie Schmidt, Maria Wiebe, •Beatrice Dittes, and Marius Grundmann — Universität Leipzig, Fakultät für Physik und Geowissenschaften, Institut für Experimentelle Physik II, Linnéstrasse 5, D-04103 Leipzig, Germany

ZnO has great potential for optoelectronic and spintronic applications. Deep level transient spectroscopy (DLTS) has been used to probe the parameters of deep defects in intrinsically n-type conducting, magnetic ZnO [1]. Different groups report on thermal activation energies ranging from 0.12 eV up to 0.6 eV below the conduction band minimum and an abnormally large variation of the capture cross section σ. As shown for other material systems with deep defects exhibiting a Meyer-Neldel Rule (MNR) behavior [2], the large variation of σ is an artifact of an incorrect analysis of DLTS data. Using DLTS data we show that also deep electron defects in ZnO exhibit the MNR behavior. Electron and hole defects in the same material system have to fit along the same MNR line. Therefore, the established isokinetic temperature will also help to fully understand deep hole defects in ZnO.

[1] M. Diaconu, H. Schmidt, H. Hochmuth, M. Lorenz, H. v. Wenckstern, G. Biehne, D. Spemann, M. Grundmann, Sol. Stat. Comm. 137, 417 (2006).

[2] J. A. M. AbuShama et al., Appl. Phys. Lett. 87, 123502 (2006).